SSM6L40TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 1.6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.03 грн |
| 6000+ | 8.81 грн |
| 9000+ | 8.38 грн |
| 15000+ | 7.41 грн |
| 21000+ | 7.14 грн |
| 30000+ | 6.88 грн |
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Технічний опис SSM6L40TU,LF Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 1.6A UF6, Part Status: Active, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA, FET Feature: Logic Level Gate, 4V Drive, Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V, Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 500mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції SSM6L40TU,LF за ціною від 6.96 грн до 44.31 грн
| Фото | Назва | Виробник | Інформація |
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SSM6L40TU,LF | Виробник : Toshiba |
MOSFETs LowON Res MOSFET ID=1.6A VDSS=30V |
на замовлення 139300 шт: термін постачання 21-30 дні (днів) |
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SSM6L40TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 1.6A UF6 Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA FET Feature: Logic Level Gate, 4V Drive Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Power - Max: 500mW (Ta) |
на замовлення 94343 шт: термін постачання 21-31 дні (днів) |
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