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SSM6N15AFE,LM

SSM6N15AFE,LM Toshiba

6F4FBFC6ED582E4549EA0DB481CC7889CFCA9B1C9654D83EC4B6FB8CFD607A70.pdf
Виробник: Toshiba
MOSFETs 30V VDSS 20V VGSS N-Ch 150mW PD
на замовлення 3923 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SSM6N15AFE,LM Toshiba

Description: MOSFET 2N-CH 30V 0.1A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 100mA, Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V, Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: ES6, Part Status: Active.

Інші пропозиції SSM6N15AFE,LM

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
SSM6N15AFE,LM SSM6N15AFE,LM Toshiba Semiconductor and Storage docget.jsp?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
SSM6N15AFE,LM SSM6N15AFE,LM Toshiba Semiconductor and Storage docget.jsp?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SSM6N15AFE,LM docget.jsp?did=5870&prodName=SSM6N15AFE
SSM6N15AFE,LM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
SSM6N15AFE,LM docget.jsp?did=5870&prodName=SSM6N15AFE
SSM6N15AFE,LM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.