SSM6N35AFE,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: ES6
| Кількість | Ціна |
|---|---|
| 4000+ | 3.80 грн |
| 8000+ | 3.16 грн |
| 12000+ | 3.09 грн |
| 20000+ | 2.84 грн |
| 28000+ | 2.77 грн |
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Технічний опис SSM6N35AFE,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V, Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: ES6.
Інші пропозиції SSM6N35AFE,LF за ціною від 3.89 грн до 25.43 грн
| Фото | Назва | Виробник | Інформація |
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SSM6N35AFE,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.25A ES6 Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1V @ 100µA FET Feature: Logic Level Gate, 1.2V Drive Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 250mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: 2 N-Channel (Dual) |
на замовлення 35041 шт: термін постачання 21-31 дні (днів) |
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SSM6N35AFE,LF | Виробник : Toshiba |
MOSFETs LowON Res MOSFET ID=.25A VDSS=20V |
на замовлення 108531 шт: термін постачання 21-30 дні (днів) |
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