SSM6N55NU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 30V 4A UDFN6, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V, Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-µDFN (2x2), Part Status: Active.