SSM6N58NU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
Description: MOSFET 2N-CH 30V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFN (2x2)
Part Status: Active
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.88 грн |
6000+ | 7.27 грн |
9000+ | 6.55 грн |
30000+ | 6.05 грн |
75000+ | 5.81 грн |
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Технічний опис SSM6N58NU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V, Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-UDFN (2x2), Part Status: Active.
Інші пропозиції SSM6N58NU,LF за ціною від 7.28 грн до 33.65 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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SSM6N58NU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFN (2x2) Part Status: Active |
на замовлення 147165 шт: термін постачання 21-31 дні (днів) |
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SSM6N58NU,LF | Виробник : Toshiba | MOSFET N-Ch Sm Sig FET 4A 30V 2-in-1 |
на замовлення 86864 шт: термін постачання 21-30 дні (днів) |
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