Технічний опис SSM6N7002CFU,LF(T Toshiba
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88; ESD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.17A, Power dissipation: 285mW, Case: SC88, Gate-source voltage: ±20V, On-state resistance: 4.7Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Gate charge: 0.27nC, кількість в упаковці: 5 шт.
Інші пропозиції SSM6N7002CFU,LF(T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SSM6N7002CFU,LF(T | Виробник : TOSHIBA |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.17A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Gate charge: 0.27nC кількість в упаковці: 5 шт |
товару немає в наявності |
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SSM6N7002CFU,LF(T | Виробник : TOSHIBA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.17A; 285mW; SC88; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.17A Power dissipation: 285mW Case: SC88 Gate-source voltage: ±20V On-state resistance: 4.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Gate charge: 0.27nC |
товару немає в наявності |