SSM6N7002KFU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
| Кількість | Ціна |
|---|---|
| 23+ | 14.12 грн |
| 37+ | 8.31 грн |
| 100+ | 5.17 грн |
| 500+ | 3.55 грн |
| 1000+ | 3.12 грн |
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Технічний опис SSM6N7002KFU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 285mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA, Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: US6, Part Status: Active.
Інші пропозиції SSM6N7002KFU,LF за ціною від 2.16 грн до 14.72 грн
| Фото | Назва | Виробник | Інформація |
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SSM6N7002KFU,LF | Виробник : Toshiba |
MOSFETs Small-signal MOSFET 2in1 ESD Protected |
на замовлення 298787 шт: термін постачання 21-30 дні (днів) |
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SSM6N7002KFU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
товару немає в наявності |