SSM6N813R,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Відгуки про товар
Написати відгук
Технічний опис SSM6N813R,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V, Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції SSM6N813R,LF за ціною від 12.84 грн до 35.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SSM6N813R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
SSM6N813R,LF | Toshiba |
MOSFETs Small Signal MOSFET Dual N-ch VDSS=100V, VGSS=+/-20V, RDS(@4.5V)=0.154Ohm, ID=3.5A |
на замовлення 2449 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SSM6N813R,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.41 грн |
| 13+ | 23.05 грн |
| 100+ | 16.43 грн |
| 500+ | 14.04 грн |
| 1000+ | 12.84 грн |
| SSM6N813R,LF |
|
Виробник: Toshiba
MOSFETs Small Signal MOSFET Dual N-ch VDSS=100V, VGSS=+/-20V, RDS(@4.5V)=0.154Ohm, ID=3.5A
MOSFETs Small Signal MOSFET Dual N-ch VDSS=100V, VGSS=+/-20V, RDS(@4.5V)=0.154Ohm, ID=3.5A
на замовлення 2449 шт:
термін постачання 21-30 дні (днів)