SSM6N813R,LXHF Toshiba
Виробник: ToshibaMOSFET AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F
на замовлення 5804 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.2 грн |
| 10+ | 48.05 грн |
| 100+ | 32.09 грн |
| 500+ | 25.33 грн |
| 1000+ | 20.28 грн |
| 3000+ | 19.18 грн |
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Технічний опис SSM6N813R,LXHF Toshiba
Description: AUTO AEC-Q SS MOS DUAL N-CH LOW, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V, Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Part Status: Active.
Інші пропозиції SSM6N813R,LXHF
| Фото | Назва | Виробник | Інформація |
Доступність |
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SSM6N813R,LXHF | Виробник : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS DUAL N-CH LOW Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active |
товар відсутній |
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SSM6N813R,LXHF | Виробник : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS DUAL N-CH LOW Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active |
товар відсутній |