
SSM6N813R,LXHF Toshiba

MOSFET AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F
на замовлення 5804 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
6+ | 59.48 грн |
10+ | 51.78 грн |
100+ | 34.58 грн |
500+ | 27.29 грн |
1000+ | 21.85 грн |
3000+ | 20.67 грн |
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Технічний опис SSM6N813R,LXHF Toshiba
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V, Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: 6-TSOP-F, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції SSM6N813R,LXHF за ціною від 21.85 грн до 83.56 грн
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SSM6N813R,LXHF | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 1298 шт: термін постачання 21-31 дні (днів) |
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SSM6N813R,LXHF | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |