SSM6P35FE,LM Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
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Технічний опис SSM6P35FE,LM Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.1A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 100mA, Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V, Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6.
Інші пропозиції SSM6P35FE,LM
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SSM6P35FE,LM | Виробник : Toshiba |
 MOSFETs Small-signal MOSFET P-Channel |
товару немає в наявності |