SSM6P69NU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-µDFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
| Кількість | Ціна |
|---|---|
| 3000+ | 11.17 грн |
| 6000+ | 9.84 грн |
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Технічний опис SSM6P69NU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A 6DFN, Drain to Source Voltage (Vdss): 20V, Power - Max: 1W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR), Supplier Device Package: 6-µDFN (2x2), Vgs(th) (Max) @ Id: 1.2V @ 1mA, FET Feature: Logic Level Gate, 1.8V Drive, Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta).
Інші пропозиції SSM6P69NU,LF за ціною від 8.44 грн до 47.26 грн
| Фото | Назва | Виробник | Інформація |
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SSM6P69NU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 4A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.74nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 6-µDFN (2x2) |
на замовлення 9042 шт: термін постачання 21-31 дні (днів) |
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SSM6P69NU,LF | Виробник : Toshiba |
MOSFETs Small Signal MOSFET P-ch x 2 VDSS=-20V, VGSS=+6/-12V, ID=-4.0A, in UDFN6 package |
на замовлення 4460 шт: термін постачання 21-30 дні (днів) |
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