Технічний опис STGB20NB37LZ
Description: IGBT 425V 40A 200W D2PAK, Power - Max: 200 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 425 V, Current - Collector (Ic) (Max): 40 A, Gate Charge: 51 nC, Test Condition: 250V, 20A, 1kOhm, 4.5V, Switching Energy: 11.8mJ (off), Td (on/off) @ 25°C: 2.3µs/2µs, Supplier Device Package: D2PAK, Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції STGB20NB37LZ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
STGB20NB37LZ | STMicroelectronics |
Description: IGBT 425V 40A 200W D2PAKPower - Max: 200 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 425 V Current - Collector (Ic) (Max): 40 A Gate Charge: 51 nC Test Condition: 250V, 20A, 1kOhm, 4.5V Switching Energy: 11.8mJ (off) Td (on/off) @ 25°C: 2.3µs/2µs Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
|
STGB20NB37LZ | STMicroelectronics |
IGBT Transistors N-Channel 20 Amp IGBT |
товару немає в наявності |
В кошику од. на суму грн. |
| STGB20NB37LZ |
![]() |
Виробник: STMicroelectronics
Description: IGBT 425V 40A 200W D2PAK
Power - Max: 200 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 425 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 51 nC
Test Condition: 250V, 20A, 1kOhm, 4.5V
Switching Energy: 11.8mJ (off)
Td (on/off) @ 25°C: 2.3µs/2µs
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: IGBT 425V 40A 200W D2PAK
Power - Max: 200 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 425 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 51 nC
Test Condition: 250V, 20A, 1kOhm, 4.5V
Switching Energy: 11.8mJ (off)
Td (on/off) @ 25°C: 2.3µs/2µs
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STGB20NB37LZ |
![]() |
Виробник: STMicroelectronics
IGBT Transistors N-Channel 20 Amp IGBT
IGBT Transistors N-Channel 20 Amp IGBT
товару немає в наявності
В кошику
од. на суму грн.




