SUD20N10-66L-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 16.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 2000+ | 22.17 грн |
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Технічний опис SUD20N10-66L-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 16.9A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc), Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V, Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V.
Інші пропозиції SUD20N10-66L-GE3 за ціною від 19.06 грн до 93.53 грн
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SUD20N10-66L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 16.9A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V |
на замовлення 3744 шт: термін постачання 21-31 дні (днів) |
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SUD20N10-66L-GE3 | Vishay Semiconductors |
MOSFETs N-Channel 100-V D-S |
на замовлення 2913 шт: термін постачання 21-30 дні (днів) |
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| SUD20N10-66L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 16.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
Description: MOSFET N-CH 100V 16.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
на замовлення 3744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.07 грн |
| 10+ | 50.13 грн |
| 100+ | 33.06 грн |
| 500+ | 24.12 грн |
| 1000+ | 21.90 грн |
| SUD20N10-66L-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs N-Channel 100-V D-S
MOSFETs N-Channel 100-V D-S
на замовлення 2913 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.53 грн |
| 10+ | 57.99 грн |
| 100+ | 33.26 грн |
| 500+ | 25.88 грн |
| 1000+ | 23.56 грн |
| 2000+ | 21.94 грн |
| 4000+ | 19.06 грн |