SUD35N10-26P-E3 Vishay Semiconductors
на замовлення 3166 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 184.95 грн |
| 10+ | 128.29 грн |
| 100+ | 80.00 грн |
| 500+ | 65.83 грн |
| 2000+ | 65.68 грн |
| 4000+ | 62.31 грн |
Відгуки про товар
Написати відгук
Технічний опис SUD35N10-26P-E3 Vishay Semiconductors
Description: MOSFET N-CH 100V 35A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V, Power Dissipation (Max): 8.3W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V.
Інші пропозиції SUD35N10-26P-E3 за ціною від 94.66 грн до 219.91 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SUD35N10-26P-E3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 100V 35A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V Power Dissipation (Max): 8.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V |
на замовлення 399 шт: термін постачання 21-31 дні (днів) |
|
||||||||
 |
SUD35N10-26P-E3 | Виробник : Vishay |
Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK |
товару немає в наявності |
|||||||||
| SUD35N10-26P-E3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 83W Case: TO252 Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: 40A кількість в упаковці: 2000 шт |
товару немає в наявності |
||||||||||
|
|
SUD35N10-26P-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 35A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V Power Dissipation (Max): 8.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V |
товару немає в наявності |
|||||||||
| SUD35N10-26P-E3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 35A; Idm: 40A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 83W Case: TO252 Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: 40A |
товару немає в наявності |