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Технічний опис SUD45P03-09-GE3 Vishay / Siliconix
Description: MOSFET P-CH 30V 45A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V.
Інші пропозиції SUD45P03-09-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SUD45P03-09-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 30V 45A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SUD45P03-09-GE3 | VISHAY |
Description: VISHAY - SUD45P03-09-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 45 A, 0.0072 ohm, TO-252AA, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 45 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 41.7 Gate-Source-Schwellenspannung, max.: 2.5 Verlustleistung: 41.7 Bauform - Transistor: TO-252AA Anzahl der Pins: 3 Produktpalette: TrenchFET Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0072 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.0072 SVHC: No SVHC (17-Dec-2015) |
товару немає в наявності |
В кошику од. на суму грн. |
| SUD45P03-09-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Description: MOSFET P-CH 30V 45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| SUD45P03-09-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SUD45P03-09-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 45 A, 0.0072 ohm, TO-252AA, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 45
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 41.7
Gate-Source-Schwellenspannung, max.: 2.5
Verlustleistung: 41.7
Bauform - Transistor: TO-252AA
Anzahl der Pins: 3
Produktpalette: TrenchFET
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.0072
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.0072
SVHC: No SVHC (17-Dec-2015)
Description: VISHAY - SUD45P03-09-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 45 A, 0.0072 ohm, TO-252AA, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 45
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 41.7
Gate-Source-Schwellenspannung, max.: 2.5
Verlustleistung: 41.7
Bauform - Transistor: TO-252AA
Anzahl der Pins: 3
Produktpalette: TrenchFET
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.0072
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.0072
SVHC: No SVHC (17-Dec-2015)
товару немає в наявності
В кошику
од. на суму грн.