SUD45P03-10-E3

Виробник: Vishay Semiconductor
P-канальный ПТ, VDS,В 30, ID 15A, Ptot,Вт 70,... Транзистори Корпус: TO-252 Од. вим: шт
кількість в упаковці: 2500 шт

Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V TO252
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)