Технічний опис SUD50P04-13L-E3 VISHAY
Description: MOSFET P-CH 40V 60A TO252, Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3W (Ta), 93.7W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції SUD50P04-13L-E3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SUD50P04-13L-E3 | Виробник : Vishay |
Транзистори |
товару немає в наявності |
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SUD50P04-13L-E3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 40V 60A TO252Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3W (Ta), 93.7W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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SUD50P04-13L-E3 | Виробник : Vishay / Siliconix |
MOSFETs RECOMMENDED ALT SUD5 |
товару немає в наявності |




