SUM50010E-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 150A TO263
Packaging: Strip
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
Description: MOSFET N-CH 60V 150A TO263
Packaging: Strip
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
на замовлення 1534 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 233.26 грн |
10+ | 188.6 грн |
100+ | 152.57 грн |
500+ | 127.27 грн |
1000+ | 108.98 грн |
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Технічний опис SUM50010E-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 150A TO263, Packaging: Strip, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V.
Інші пропозиції SUM50010E-GE3 за ціною від 107.49 грн до 255.47 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SUM50010E-GE3 | Виробник : Vishay Semiconductors | MOSFET 60V Vds; 20V Vgs TO-263 |
на замовлення 2202 шт: термін постачання 21-30 дні (днів) |
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SUM50010E-GE3 | Виробник : Vishay | Trans MOSFET N-CH 60V 150A 3-Pin(2+Tab) D2PAK |
товар відсутній |
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SUM50010E-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 212nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
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SUM50010E-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 212nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |