| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 302.02 грн |
| 10+ | 209.59 грн |
| 100+ | 129.09 грн |
| 500+ | 118.05 грн |
| 800+ | 102.17 грн |
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Технічний опис SUM50010E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 60V 150A TO263, Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Strip.
Інші пропозиції SUM50010E-GE3 за ціною від 103.43 грн до 310.65 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SUM50010E-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 60V 150A TO263Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Strip |
на замовлення 816 шт: термін постачання 21-31 дні (днів) |
|
| SUM50010E-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 150A TO263
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Strip
Description: MOSFET N-CH 60V 150A TO263
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Strip
на замовлення 816 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 310.65 грн |
| 10+ | 197.81 грн |
| 100+ | 140.25 грн |
| 800+ | 103.43 грн |