SUM60030E-GE3 Vishay Semiconductors
на замовлення 2223 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 213.41 грн |
10+ | 177.35 грн |
25+ | 145.54 грн |
100+ | 124.18 грн |
250+ | 117.5 грн |
500+ | 112.83 грн |
800+ | 102.81 грн |
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Технічний опис SUM60030E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 80V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D²Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 40 V.
Інші пропозиції SUM60030E-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SUM60030E-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 80V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 40 V |
товар відсутній |
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SUM60030E-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 80V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 40 V |
товар відсутній |