SUM90330E-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 35.1A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 43.96 грн |
| 1600+ | 41.63 грн |
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Технічний опис SUM90330E-GE3 Vishay Siliconix
Description: MOSFET N-CH 200V 35.1A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc), Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V.
Інші пропозиції SUM90330E-GE3 за ціною від 49.01 грн до 147.56 грн
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SUM90330E-GE3 | Vishay Semiconductors |
MOSFET 200V Vds 20V Vgs TO-263 |
на замовлення 3038 шт: термін постачання 21-30 дні (днів) |
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SUM90330E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 35.1A TO263 Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V |
на замовлення 2197 шт: термін постачання 21-31 дні (днів) |
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| SUM90330E-GE3 |
|
Виробник: Vishay Semiconductors
MOSFET 200V Vds 20V Vgs TO-263
MOSFET 200V Vds 20V Vgs TO-263
на замовлення 3038 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.23 грн |
| 10+ | 100.03 грн |
| 100+ | 68.07 грн |
| 500+ | 53.85 грн |
| 2400+ | 49.70 грн |
| 4800+ | 49.01 грн |
| SUM90330E-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 35.1A TO263
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Description: MOSFET N-CH 200V 35.1A TO263
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
на замовлення 2197 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.56 грн |
| 10+ | 91.46 грн |
| 100+ | 62.20 грн |