Технічний опис SUP53P06-20-GE3 Vishay / Siliconix
Description: MOSFET P-CH 60V 9.2A/53A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V, Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V.
Інші пропозиції SUP53P06-20-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SUP53P06-20-GE3 | Виробник : Vishay |
 Trans MOSFET P-CH 60V 9.2A 3-Pin(3+Tab) TO-220AB |
товару немає в наявності |
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SUP53P06-20-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 60V 9.2A/53A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
товару немає в наявності |