Продукція > TOSHIBA > T2N7002BK,LM
T2N7002BK,LM

T2N7002BK,LM Toshiba


t2n7002bk_datasheet_en_20191025.pdf Виробник: Toshiba
Trans MOSFET N-CH Si 60V 0.4A 3-Pin SOT-23 T/R
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис T2N7002BK,LM Toshiba

Description: MOSFET N-CH 60V 400MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.

Інші пропозиції T2N7002BK,LM

Фото Назва Виробник Інформація Доступність
Ціна
T2N7002BK,LM T2N7002BK,LM Виробник : Toshiba Semiconductor and Storage docget.jsp?did=30376&prodName=T2N7002BK Description: MOSFET N-CH 60V 400MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
T2N7002BK,LM T2N7002BK,LM Виробник : Toshiba Semiconductor and Storage docget.jsp?did=30376&prodName=T2N7002BK Description: MOSFET N-CH 60V 400MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
T2N7002BK,LM T2N7002BK,LM Виробник : Toshiba 3434374543333633343633424539373637344331393743373133434445344242.pdf MOSFETs Small Signal Mosfet
товару немає в наявності
В кошику  од. на суму  грн.