T2N7002BK,LM(T TOSHIBA
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 1.2A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.75Ω
Mounting: SMD
Gate charge: 0.39nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 7.13 грн |
| 112+ | 3.82 грн |
| 127+ | 3.35 грн |
| 144+ | 2.95 грн |
| 160+ | 2.66 грн |
| 200+ | 2.40 грн |
| 500+ | 2.05 грн |
| 1500+ | 1.69 грн |
| 3000+ | 1.51 грн |
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Технічний опис T2N7002BK,LM(T TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 1.2A; 320mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.4A, Pulsed drain current: 1.2A, Power dissipation: 0.32W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 1.75Ω, Mounting: SMD, Gate charge: 0.39nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.