TBC857B,LM Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.21 грн |
| 6000+ | 1.89 грн |
| 9000+ | 1.77 грн |
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Технічний опис TBC857B,LM Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SOT-23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA, Current - Collector Cutoff (Max): 30nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V, Frequency - Transition: 80MHz, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW.
Інші пропозиції TBC857B,LM за ціною від 2.44 грн до 11.55 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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TBC857B,LM | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SOT-23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA Current - Collector Cutoff (Max): 30nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V Frequency - Transition: 80MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW |
на замовлення 10913 шт: термін постачання 21-31 дні (днів) |
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TBC857B,LM | Toshiba |
Bipolar Transistors - BJT BJT PNP -0.15A -50V |
на замовлення 5533 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TBC857B,LM |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Description: TRANS PNP 50V 0.15A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
на замовлення 10913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.55 грн |
| 45+ | 6.60 грн |
| 100+ | 4.08 грн |
| 500+ | 2.78 грн |
| 1000+ | 2.44 грн |
| TBC857B,LM |
|
Виробник: Toshiba
Bipolar Transistors - BJT BJT PNP -0.15A -50V
Bipolar Transistors - BJT BJT PNP -0.15A -50V
на замовлення 5533 шт:
термін постачання 21-30 дні (днів)