на замовлення 28908 шт:
термін постачання 780-789 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.2 грн |
| 10+ | 180.17 грн |
| 100+ | 126.52 грн |
| 500+ | 112.75 грн |
| 1000+ | 96.36 грн |
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Технічний опис TJ200F04M3L,LXHQ Toshiba
Description: MOSFET P-CH 40V 200A TO220SM, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-220SM(W), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V.
Інші пропозиції TJ200F04M3L,LXHQ
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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TJ200F04M3L,LXHQ Код товару: 170672 |
 Транзистори > Польові P-канальні |
товар відсутній
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TJ200F04M3L,LXHQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 200A TO220SM Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V |
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TJ200F04M3L,LXHQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 200A TO220SM Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V |
товар відсутній |