на замовлення 3798 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 123.59 грн |
| 10+ | 82.83 грн |
| 100+ | 50.54 грн |
| 250+ | 50.47 грн |
| 500+ | 41.05 грн |
| 1000+ | 37.96 грн |
| 2000+ | 36.86 грн |
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Технічний опис TJ60S04M3L(T6L1,NQ Toshiba
Description: MOSFET P-CH 40V 60A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V.
Інші пропозиції TJ60S04M3L(T6L1,NQ
| Фото | Назва | Виробник | Інформація |
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TJ60S04M3L(T6L1,NQ | Виробник : Toshiba Semiconductor and Storage |
 Description: MOSFET P-CH 40V 60A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V |
товару немає в наявності |
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TJ60S04M3L(T6L1,NQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V |
товару немає в наявності |