| Кількість | Ціна |
|---|---|
| 3+ | 146.86 грн |
| 10+ | 92.20 грн |
| 100+ | 54.22 грн |
| 500+ | 42.97 грн |
| 1000+ | 39.45 грн |
| 2000+ | 36.36 грн |
| 4000+ | 35.23 грн |
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Технічний опис TJ60S04M3L(T6L1,NQ Toshiba
Description: MOSFET P-CH 40V 60A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +10V, -20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: DPAK+, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції TJ60S04M3L(T6L1,NQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TJ60S04M3L(T6L1,NQ | Виробник : Toshiba Semiconductor and Storage |
 Description: MOSFET P-CH 40V 60A DPAKInput Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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TJ60S04M3L(T6L1,NQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 60A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |