на замовлення 47339 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 72.44 грн |
| 10+ | 55.28 грн |
| 100+ | 33.32 грн |
| 250+ | 33.25 грн |
| 500+ | 26.64 грн |
| 1000+ | 24.44 грн |
| 2000+ | 22.60 грн |
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Технічний опис TJ8S06M3L,LXHQ Toshiba
Description: MOSFET P-CH 60V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: DPAK+, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V.
Інші пропозиції TJ8S06M3L,LXHQ
| Фото | Назва | Виробник | Інформація |
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TJ8S06M3L,LXHQ | Виробник : Toshiba |
 Trans MOSFET P-CH Si 60V 8A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
товару немає в наявності |
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TJ8S06M3L,LXHQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
товару немає в наявності |
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TJ8S06M3L,LXHQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
товару немає в наявності |