TK024N60Z1,S1F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: N-CH MOSFET 600V 0.024OHM 10V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 33A, 10V
Power Dissipation (Max): 506W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.84mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 300 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1125.27 грн |
| 50+ | 629.59 грн |
| 100+ | 590.23 грн |
Відгуки про товар
Написати відгук
Технічний опис TK024N60Z1,S1F Toshiba Semiconductor and Storage
Description: N-CH MOSFET 600V 0.024OHM 10V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 33A, 10V, Power Dissipation (Max): 506W (Tc), Vgs(th) (Max) @ Id: 4V @ 3.84mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 300 V.