TK090Z65Z,S1F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A TO247-4L
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
Відгуки про товар
Написати відгук
Технічний опис TK090Z65Z,S1F Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A TO247-4L, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-4L(T), Part Status: Active, Packaging: Tube, Vgs(th) (Max) @ Id: 4V @ 1.27mA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-247-4.
Інші пропозиції TK090Z65Z,S1F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TK090Z65Z,S1F | Виробник : Toshiba |
MOSFETs Pb-F POWER MOSFET TRANSISTOR TO247-4L PD=230W F=1MHZ |
товару немає в наявності |