TK099U60Z1,RQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 930µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
| Кількість | Ціна |
|---|---|
| 2000+ | 105.19 грн |
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Технічний опис TK099U60Z1,RQ Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TOLL, Vgs(th) (Max) @ Id: 4V @ 930µA, Power Dissipation (Max): 176W (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), FET Type: N-Channel.
Інші пропозиції TK099U60Z1,RQ за ціною від 97.75 грн до 310.14 грн
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TK099U60Z1,RQ | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 600 V, 0.099 @10V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TOLL Vgs(th) (Max) @ Id: 4V @ 930µA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK099U60Z1,RQ | Toshiba |
MOSFETs N-ch MOSFET, 600 V, 0.099 ohma.10V, TOLL, DTMOS? |
на замовлення 1600 шт: термін постачання 21-30 дні (днів) |
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| TK099U60Z1,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 930µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: N-CH MOSFET, 600 V, 0.099 @10V,
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 930µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 299.85 грн |
| 10+ | 190.54 грн |
| 100+ | 134.77 грн |
| 500+ | 116.36 грн |
| TK099U60Z1,RQ |
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Виробник: Toshiba
MOSFETs N-ch MOSFET, 600 V, 0.099 ohma.10V, TOLL, DTMOS?
MOSFETs N-ch MOSFET, 600 V, 0.099 ohma.10V, TOLL, DTMOS?
на замовлення 1600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 310.14 грн |
| 10+ | 202.99 грн |
| 100+ | 124.48 грн |
| 500+ | 114.63 грн |
| 2000+ | 97.75 грн |