Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > TK100E08N1,S1X

TK100E08N1,S1X Toshiba Semiconductor and Storage

Name: TK100E08N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: 3516538-3
Price: 255.01 UAH
Availability: InStock

TK100E08N1_datasheet_en_20140630.pdf?did=12754&prodName=TK100E08N1

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V

на замовлення 23 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
2+	255.01 грн

Мінімальне замовлення: 2

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Технічний опис TK100E08N1,S1X Toshiba Semiconductor and Storage

Description: MOSFET N-CH 80V 100A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V, Power Dissipation (Max): 255W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V.