TK10A50W,S5X Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 2+ | 174.85 грн |
| 50+ | 82.81 грн |
| 100+ | 74.51 грн |
Відгуки про товар
Написати відгук
Технічний опис TK10A50W,S5X Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.7V @ 500µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції TK10A50W,S5X
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TK10A50W,S5X | Виробник : Toshiba |
MOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS |
товару немає в наявності |