TK10V60W,LVQ Toshiba
Виробник: ToshibaTK10V60W,LVQ Toshiba MOSFETs Transistor N-CH 600V 9.7A 5-Pin DFN EP T/R - Arrow.com
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Технічний опис TK10V60W,LVQ Toshiba
Description: MOSFET N-CH 600V 9.7A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V, Power Dissipation (Max): 88.3W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 500µA, Supplier Device Package: 4-DFN-EP (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V.
Інші пропозиції TK10V60W,LVQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| TK10V60W,LVQ | Виробник : Toshiba |
Trans MOSFET N-CH 600V 9.7A 5-Pin DFN EP T/R |
товару немає в наявності |
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TK10V60W,LVQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 9.7A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 88.3W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
товару немає в наявності |
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TK10V60W,LVQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 9.7A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 88.3W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
товару немає в наявності |
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TK10V60W,LVQ | Виробник : Toshiba |
MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A |
товару немає в наявності |