TK10V60W,LVQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 9.7A 4DFN, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-DFN-EP (8x8), Vgs(th) (Max) @ Id: 3.7V @ 500µA, Power Dissipation (Max): 88.3W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR).