TK110P10PL,RQ(S2 TOSHIBA
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 160A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 160A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 8+ | 63.27 грн |
| 9+ | 48.01 грн |
| 25+ | 42.13 грн |
| 100+ | 37.68 грн |
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Технічний опис TK110P10PL,RQ(S2 TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 160A; 75W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 60A, Pulsed drain current: 160A, Power dissipation: 75W, Case: DPAK, Gate-source voltage: ±20V, On-state resistance: 16mΩ, Mounting: SMD, Kind of channel: enhancement.