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TK12P50W,RQ Toshiba Semiconductor and Storage

TK12P50W_datasheet_en_20151208.pdf?did=53223&prodName=TK12P50W Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+127.02 грн
10+ 101.93 грн
100+ 81.13 грн
500+ 64.42 грн
1000+ 54.66 грн
Мінімальне замовлення: 3
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Технічний опис TK12P50W,RQ Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR DPA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 600µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V.

Інші пропозиції TK12P50W,RQ

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Ціна без ПДВ
TK12P50W,RQ Виробник : Toshiba Semiconductor and Storage TK12P50W_datasheet_en_20151208.pdf?did=53223&prodName=TK12P50W Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
товар відсутній
TK12P50W,RQ TK12P50W,RQ Виробник : Toshiba TK12P50W_datasheet_en_20151208-1649917.pdf MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=100W F=1MHZ
товар відсутній