TK12Q60W,S1VQ Toshiba Semiconductor and Storage

Description: MOSFET N CH 600V 11.5A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 3.7V @ 600µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.