Технічний опис TK12V60W,LVQ Toshiba
Description: MOSFET N-CH 600V 11.5A 4DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 600µA, Supplier Device Package: 4-DFN-EP (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V.
Інші пропозиції TK12V60W,LVQ
| Фото | Назва | Виробник | Інформація |
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Ціна |
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TK12V60W,LVQ | Виробник : Toshiba |
 Trans MOSFET N-CH Si 600V 11.5A 5-Pin DFN EP |
товару немає в наявності |
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TK12V60W,LVQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11.5A 4DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 600µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
товару немає в наявності |
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TK12V60W,LVQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11.5A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 600µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
товару немає в наявності |
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TK12V60W,LVQ | Виробник : Toshiba |
MOSFETs N-Ch DTMOSIV 600 V 104W 890pF 11.5A |
товару немає в наявності |