TK13E25D,S1X(S Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 13A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 2+ | 165.35 грн |
| 10+ | 132.34 грн |
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Технічний опис TK13E25D,S1X(S Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 13A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 102W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції TK13E25D,S1X(S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TK13E25D,S1X(S | Виробник : Toshiba |
MOSFET N-Ch MOS 13A 250V 102W 1100pF 0.25 |
товару немає в наявності |