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Технічний опис TK14E65W5,S1X Toshiba
Description: MOSFET N-CH 650V 13.7A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 690µA, Power Dissipation (Max): 130W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції TK14E65W5,S1X
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TK14E65W5,S1X | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 13.7A TO220Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 690µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
TK14E65W5,S1X | Toshiba |
MOSFETs Power MOSFET N-Channel |
товару немає в наявності |
В кошику од. на суму грн. |
| TK14E65W5,S1X |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 650V 13.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TK14E65W5,S1X |
|
Виробник: Toshiba
MOSFETs Power MOSFET N-Channel
MOSFETs Power MOSFET N-Channel
товару немає в наявності
В кошику
од. на суму грн.