TK155A65Z,S4X Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 730µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Технічний опис TK155A65Z,S4X Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A TO220SIS, Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 730µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції TK155A65Z,S4X за ціною від 122.37 грн до 365.93 грн
| Фото | Назва | Виробник | Інформація |
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TK155A65Z,S4X | Виробник : Toshiba |
MOSFETs MOSFET 650V 155mOhms DTMOS-VI |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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