TK15S04N1L,LXHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
на замовлення 1982 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 61.32 грн |
10+ | 51.32 грн |
100+ | 35.56 грн |
500+ | 27.88 грн |
1000+ | 23.73 грн |
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Технічний опис TK15S04N1L,LXHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: DPAK+, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V.
Інші пропозиції TK15S04N1L,LXHQ за ціною від 20.92 грн до 68.11 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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TK15S04N1L,LXHQ | Виробник : Toshiba | MOSFET PD=46W F=1MHZ AEC-Q101 |
на замовлення 2966 шт: термін постачання 21-30 дні (днів) |
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TK15S04N1L,LXHQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 15A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: DPAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V |
товар відсутній |