Інші пропозиції TK160F10N1L
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| TK160F10N1L | Toshiba |
Toshiba |
товару немає в наявності |
В кошику од. на суму грн. | |
|
TK160F10N1L,LQ(O | TOSHIBA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 160A Power dissipation: 375W Case: TO220SM Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 121nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| TK160F10N1L,LQ(O |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 375W
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 375W
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 121nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.



