Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > TK16A60W5,S4VX

TK16A60W5,S4VX Toshiba Semiconductor and Storage

Name: TK16A60W5,S4VX
Brand: Toshiba Semiconductor and Storage
SKU: 20758727-3
Price: 147.2 UAH
Availability: InStock

TK16A60W5_datasheet_en_20131225.pdf?did=13747&prodName=TK16A60W5

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V

на замовлення 58 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
2+	190.18 грн
50+	147.2 грн

Мінімальне замовлення: 2

Відгуки про товар

Написати відгук

Технічний опис TK16A60W5,S4VX Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 15.8A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 1.5mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V.