TK16G60W,RVQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3.7V @ 790µA
| Кількість | Ціна |
|---|---|
| 1+ | 563.31 грн |
| 10+ | 368.89 грн |
| 100+ | 270.56 грн |
| 500+ | 224.64 грн |
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Технічний опис TK16G60W,RVQ Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 3.7V @ 790µA, Power Dissipation (Max): 130W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ).
Інші пропозиції TK16G60W,RVQ
| Фото | Назва | Виробник | Інформація |
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TK16G60W,RVQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 15.8A D2PAK Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 3.7V @ 790µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
товару немає в наявності |
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TK16G60W,RVQ | Виробник : Toshiba |
MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF |
товару немає в наявності |