TK16V60W5,LVQ Toshiba
| Кількість | Ціна |
|---|---|
| 1+ | 369.21 грн |
| 10+ | 241.81 грн |
| 100+ | 150.50 грн |
| 500+ | 144.17 грн |
| 1000+ | 135.03 грн |
| 2500+ | 122.37 грн |
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Технічний опис TK16V60W5,LVQ Toshiba
Description: PB-F POWER MOSFET TRANSISTOR DTM, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), Rds On (Max) @ Id, Vgs: 245mOhm @ 7.9A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 790µA, Supplier Device Package: 4-DFN-EP (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V.
Інші пропозиції TK16V60W5,LVQ за ціною від 112.35 грн до 240.51 грн
| Фото | Назва | Виробник | Інформація |
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| TK16V60W5,LVQ | Виробник : Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR DTMPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 245mOhm @ 7.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| TK16V60W5,LVQ | Виробник : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DTM Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Rds On (Max) @ Id, Vgs: 245mOhm @ 7.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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