TK17E65W,S1X Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 17.3A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 3.5V @ 900µA, Power Dissipation (Max): 165W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.