TK17E80W,S1X Toshiba Semiconductor and Storage

Description: MOSFET N-CHANNEL 800V 17A TO220, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 850µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.