Відгуки про товар
Написати відгук
Технічний опис TK18A30D,S5X Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO-, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 139mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V.
Інші пропозиції TK18A30D,S5X за ціною від 105.70 грн до 170.88 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
| TK18A30D,S5X | Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR TO-Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 139mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V |
на замовлення 78 шт: термін постачання 21-31 дні (днів) |
|
| TK18A30D,S5X |
|
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Description: PB-F POWER MOSFET TRANSISTOR TO-
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 170.88 грн |
| 10+ | 105.70 грн |