Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > TK18A50D(STA4,Q,M)

TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage

Name: TK18A50D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: 2768843-3
Price: 223.15 UAH
Availability: InStock

TK18A50D_datasheet_en_20131101.pdf?did=692&prodName=TK18A50D

Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V

на замовлення 19 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
2+	223.15 грн

Мінімальне замовлення: 2

Відгуки про товар

Написати відгук

Технічний опис TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 500V 18A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.