TK1R4F04PB,LXGQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 1000+ | 85.86 грн |
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Технічний опис TK1R4F04PB,LXGQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-220SM(W), Vgs(th) (Max) @ Id: 3V @ 500µA, Power Dissipation (Max): 205W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V, Current - Continuous Drain (Id) @ 25°C: 160A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції TK1R4F04PB,LXGQ за ціною від 75.95 грн до 259.27 грн
| Фото | Назва | Виробник | Інформація |
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TK1R4F04PB,LXGQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 160A TO220SM Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-220SM(W) Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 205W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V Current - Continuous Drain (Id) @ 25°C: 160A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TK1R4F04PB,LXGQ | Виробник : Toshiba |
MOSFETs 205W 1MHz Automotive; AEC-Q101 |
на замовлення 1831 шт: термін постачання 21-30 дні (днів) |
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